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Spatial variation of lattice plane bending of 4H-SiC substrates


Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution x-ray diffractometry (HRXRD). In order to evaluate detailed basal plane bending properties, line scans of 0004 reflection rocking curves were carried out on the (0001) Si face along <112 @#x0305;0>、<101 @#x0305;0>、<21 @#x0305;1 @#x0305;0>、<11 @#x0305;00>、<12 @#x0305;10> and <01 @#x0305;10> directions, respectively. The silicon face of unintentional doped 4H-SiC substrates is not a flat plane. One of them is concave bend like “basin”, and the other is concave bend like “spherical”. The silicon face of on-axis n-type SiC is also not flat but approximate convex “spherical”. In contrast, the silicon face of off-axis n-type SiC is like “saddle”. Bending inheritance, effect of annealing and corrosion on bending properties of unintentional doped 4H-SiC were studied. Molten KOH defect selective etching was carried out to understand the mechanism responsible for the bending. At last, the effect of single crystal growth thermal field, structural defects on basal plane bending of the substrates were explored.

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Publication details

The article was received on 27 Mar 2017, accepted on 13 Jun 2017 and first published on 13 Jun 2017

Article type: Paper
DOI: 10.1039/C7CE00572E
Citation: CrystEngComm, 2017, Accepted Manuscript
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    Spatial variation of lattice plane bending of 4H-SiC substrates

    Y. Cui, X. Hu, X. Xie, R. Wang and X. Xu, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE00572E

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