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Efficient pure green emission from Er-doped Ga2O3 films

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Abstract

This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga2O3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga2O3:Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga2O3/Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga2O3 as the host materials for Er3+ ions.

Graphical abstract: Efficient pure green emission from Er-doped Ga2O3 films

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Publication details

The article was received on 23 Mar 2017, accepted on 28 Jun 2017 and first published on 05 Jul 2017


Article type: Highlight
DOI: 10.1039/C7CE00553A
Citation: CrystEngComm, 2017, Advance Article
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    Efficient pure green emission from Er-doped Ga2O3 films

    Z. Chen, K. Saito, T. Tanaka and Q. Guo, CrystEngComm, 2017, Advance Article , DOI: 10.1039/C7CE00553A

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