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Issue 24, 2017
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The dominant effect of non-centrosymmetric displacement on the crystal-field energy splitting in the strained a-plane ZnO epi-films on r-plane sapphires

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Abstract

The polarization-dependent photoluminescence (PL) of the a-plane ZnO (a-ZnO) films grown on r-plane sapphire substrates shows that the crystal-field energy splitting (ΔCF) becomes larger with increasing film thickness from 24 nm to 291 nm. In the use of the nonlinear fitting of the stress–strain tensor to the X-ray diffraction data, we found crystal symmetry breaking from wurtzite to monoclinic in these films and determined the corresponding lattice constants and the relaxed lattice constants. With the available lattice variables, we further used the tight-binding method to calculate the band energies and compared with the PL spectra. The results confirm that the crystal deformation and the non-centrosymmetric displacement had opposite effects on the ΔCF at the Γ point and the displacement induced by the strain is the dominant effect on ΔCF.

Graphical abstract: The dominant effect of non-centrosymmetric displacement on the crystal-field energy splitting in the strained a-plane ZnO epi-films on r-plane sapphires

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Publication details

The article was received on 14 Mar 2017, accepted on 19 May 2017 and first published on 19 May 2017


Article type: Paper
DOI: 10.1039/C7CE00500H
Citation: CrystEngComm, 2017,19, 3348-3354
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    The dominant effect of non-centrosymmetric displacement on the crystal-field energy splitting in the strained a-plane ZnO epi-films on r-plane sapphires

    Y. Wu, W. Liu, H. Chen, C. Hsu and W. Hsieh, CrystEngComm, 2017, 19, 3348
    DOI: 10.1039/C7CE00500H

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