Jump to main content
Jump to site search


The dominant effect of non-centrosymmetric displacement on the crystal-field energy splitting in the strained a-plane ZnO epi-films on r-plane sapphires

Abstract

The polarization-dependent photoluminescence (PL) of a-plane ZnO films grown on r-plane sapphire substrates shows that crystal-field energy splitting (ΔCF) becomes larger as the film thickness increases from 24 nm to 291 nm. In use of nonlinear fitting of the stress–strain tensor matrix to the X-ray diffraction data, we identify crystal symmetry breaking from wurtzite to monoclinic in these films, and determine the corresponding lattice constants and the relaxed lattice constants. With the available lattice variables, we use the tight-binding model to calculate band energies to compare with the PL spectra. The results confirm that the crystal deformation and the non-centrosymmetric displacement have opposite effects on ΔCF at the Γ point, and that the displacement induced by the strain is the dominant effect on ΔCF.

Back to tab navigation
Please wait while Download options loads

Publication details

The article was received on 14 Mar 2017, accepted on 19 May 2017 and first published on 19 May 2017


Article type: Paper
DOI: 10.1039/C7CE00500H
Citation: CrystEngComm, 2017, Accepted Manuscript
  •   Request permissions

    The dominant effect of non-centrosymmetric displacement on the crystal-field energy splitting in the strained a-plane ZnO epi-films on r-plane sapphires

    Y. Wu, W. Liu, H. Chen, C. Hsu and W. Hsieh, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE00500H

Search articles by author