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On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process

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Abstract

In situ H2 etching and homoepitaxial growth of 4H-SiC were performed on on-axis Si-face substrates using low-pressure chemical vapor deposition. We investigated the effect of various etching temperatures and durations on the surface of the on-axis substrates and used optimized etching characteristics to enhance the polytype stability of the epitaxial layer. It was found that the micro-steps at the etched surface of the on-axis substrates play a vital role in enhancing the stability of the 4H-SiC polytype. Homoepitaxial 4H-SiC with up to 99% stability was successfully grown with spread-out micro-steps without step-bunching during the etching process.

Graphical abstract: On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process

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Publication details

The article was received on 09 Mar 2017, accepted on 27 Mar 2017 and first published on 28 Mar 2017


Article type: Paper
DOI: 10.1039/C7CE00479F
Citation: CrystEngComm, 2017, Advance Article
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    On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process

    H. Kim, H. Lee, Y. S. Kim, S. Lee, H. Kang, J. Heo and H. J. Kim, CrystEngComm, 2017, Advance Article , DOI: 10.1039/C7CE00479F

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