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Issue 17, 2017
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Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

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Abstract

In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2−1−10] ZnOWZ//[2−1−10] ZnSWZ//[10−1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

Graphical abstract: Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

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Publication details

The article was received on 01 Mar 2017, accepted on 30 Mar 2017 and first published on 30 Mar 2017


Article type: Communication
DOI: 10.1039/C7CE00428A
Citation: CrystEngComm, 2017,19, 2294-2299
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    Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

    L. Wang, K. Xiong, Y. He, X. Huang, J. Xia, X. Li, Y. Gu, H. Cheng and X. Meng, CrystEngComm, 2017, 19, 2294
    DOI: 10.1039/C7CE00428A

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