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CrystEngComm

Design and understanding of solid-state and crystalline materials

Paper

Nearly perfect GaN crystal via pit-assisted growth by HVPE

*
Corresponding authors
a
Korea Basic Science Institute, 169-148, Gwahak-ro, Yuseong-gu, Daejeon, Korea, Republic of Korea
b
Laboratory of Semiconductor Materials, Ecole Polytechnique Fédérale de Lausanne 1015, Lausanne, Switzerland
c
Seoul Center, Korea Basic Science Institute, Anam-dong 5-ga, Seongbuk-gu, Republic of Korea
d
Department of Science Education, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeollabuk-do, Republic of Korea
E-mail: sspark@jj.ac.kr
e
Analytical Lab. of Advanced Ferroelectric Crystals, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeollabuk-do, Republic of Korea
CrystEngComm, 2017, Advance Article

DOI: 10.1039/C7CE00246G
Received 06 Feb 2017, Accepted 14 Mar 2017
First published online 14 Mar 2017
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