Jump to main content
Jump to site search

Issue 17, 2017
Previous Article Next Article

Control of grain size and crystallinity of poly-Si films on quartz by Al-induced crystallization

Author affiliations

Abstract

The crystalline properties of poly-Si films on quartz grown using Al-induced crystallization (AIC) were investigated. The orientation fraction and grain size were controlled by modulating the annealing temperature and sample thickness. The results confirmed the enhancement of (111)-orientation fractions and grain size by lowering the annealing temperature and reducing the thickness. The effects of both parameters, annealing temperature and thickness, on the growth process were investigated, as was the role of the Al layer. We successfully formed (111)-oriented grains up to 384 μm in size at a rate of 99% in a 50 nm-thick sample annealed at 400 °C. Furthermore, the real applications of AIC poly-Si as a growth template were demonstrated through silicon thin-film and nanowire formation.

Graphical abstract: Control of grain size and crystallinity of poly-Si films on quartz by Al-induced crystallization

Back to tab navigation

Supplementary files

Publication details

The article was received on 07 Nov 2016, accepted on 27 Feb 2017 and first published on 01 Mar 2017


Article type: Paper
DOI: 10.1039/C6CE02328B
Citation: CrystEngComm, 2017,19, 2305-2311
  •   Request permissions

    Control of grain size and crystallinity of poly-Si films on quartz by Al-induced crystallization

    J. Chen, J. Suwardy, T. Subramani, W. Jevasuwan, T. Takei, K. Toko, T. Suemasu and N. Fukata, CrystEngComm, 2017, 19, 2305
    DOI: 10.1039/C6CE02328B

Search articles by author

Spotlight

Advertisements