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Issue 2, 2017
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Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride

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Abstract

We explore the use of stable, pre-formed, oligomeric aminoboranes as precursors for the chemical vapour deposition growth of few-layered hexagonal boron nitride (h-BN) films on Cu foils under atmospheric pressure conditions. Dimeric diborazane H3B·NH2BH2·NH3 (DAB), and trimeric triborazane H3B·(NH2BH2)2·NH3 (TAB), derivatives of ammonia borane, H3B·NH3 (AB), are compared with AB, a commonly used precursor for the CVD growth of h-BN. Both DAB and TAB show similar effectiveness to AB in growing h-BN few layered films. Using DAB as the precursor instead of AB leads to fully continuous h-BN films in a shorter period of time. Analysis of the surface of the h-BN films reveals that DAB and TAB precursors deposit more nanoparticles on the surface of the h-BN films during their CVD growth within the same time period as when using AB. The viability of these two new h-BN precursors (DAB and TAB), opens up a wider range of solid-state sources for growing wide band gap h-BN films using CVD techniques.

Graphical abstract: Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride

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Publication details

The article was received on 16 Sep 2016, accepted on 27 Nov 2016 and first published on 08 Dec 2016


Article type: Paper
DOI: 10.1039/C6CE02006B
Citation: CrystEngComm, 2017,19, 285-294
  • Open access: Creative Commons BY license
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    Oligomeric aminoborane precursors for the chemical vapour deposition growth of few-layer hexagonal boron nitride

    X. Wang, T. N. Hooper, A. Kumar, I. K. Priest, Y. Sheng, T. O. M. Samuels, S. Wang, A. W. Robertson, M. Pacios, H. Bhaskaran, A. S. Weller and J. H. Warner, CrystEngComm, 2017, 19, 285
    DOI: 10.1039/C6CE02006B

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