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Resistive Memory Based on a Triphenylamine-Decorated Non-Precious Cobalt(II) Bis-Terpyridine Complex

Abstract

The ITO/active material/Au sandwiched devices of a cobalt(II) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (> 1000) and low operating voltages (< 3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.

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Publication details

The article was received on 26 Jul 2017, accepted on 11 Oct 2017 and first published on 11 Oct 2017


Article type: Communication
DOI: 10.1039/C7CC05806C
Citation: Chem. Commun., 2017, Accepted Manuscript
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    Resistive Memory Based on a Triphenylamine-Decorated Non-Precious Cobalt(II) Bis-Terpyridine Complex

    J. Tang, T. Sun, J. Shao, Z. Gong and Y. Zhong, Chem. Commun., 2017, Accepted Manuscript , DOI: 10.1039/C7CC05806C

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