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Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex

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Abstract

The ITO/active material/Au sandwiched devices of a cobalt(II) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.

Graphical abstract: Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

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Publication details

The article was received on 26 Jul 2017, accepted on 11 Oct 2017 and first published on 11 Oct 2017


Article type: Communication
DOI: 10.1039/C7CC05806C
Citation: Chem. Commun., 2017, Advance Article
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    Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex

    J. Tang, T. Sun, J. Shao, Z. Gong and Y. Zhong, Chem. Commun., 2017, Advance Article , DOI: 10.1039/C7CC05806C

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