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Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

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Abstract

WS(S2)(S2CNEt2)2 has been successfully employed in the aerosol-assisted chemical vapor deposition of WS2 at temperatures above 350 °C. This precursor was found to decompose primarily through the loss of H2S, CS2, and SCNEt. The WS2 deposits were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The deposits exhibited plate-like structures growing vertically from the substrate.

Graphical abstract: Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

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Publication details

The article was received on 08 May 2017, accepted on 01 Jun 2017 and first published on 01 Jun 2017


Article type: Communication
DOI: 10.1039/C7CC03585C
Citation: Chem. Commun., 2017, Advance Article
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    Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

    N. E. Richey, C. Haines, J. L. Tami and L. McElwee-White, Chem. Commun., 2017, Advance Article , DOI: 10.1039/C7CC03585C

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