Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

Abstract

WS(S₂)(S₂CNEt₂)₂ has been successfully employed in the aerosol-assisted chemical vapor deposition of WS₂ at temperatures above 350 °C. This precursor was found to decompose primarily through the loss of H₂S, CS₂, and SCNEt. The WS₂ deposits were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The deposits exhibited plate-like structures growing vertically from the substrate.