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A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

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Corresponding authors
a
Research Centre for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Japan
E-mail: SU.Yu@nims.go.jp, TSUJIMOTO.Yoshihiro@nims.go.jp
b
Graduate School of Chemical Sciences and Engineering, Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-0808, Japan
c
Faculty of Engineering, Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-0808, Japan
d
Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Japan
e
Bragg Institute, Australian Nuclear Science and Technology Organization, Lucas Heights, Australia
f
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Japan
g
Division of Molecular Science, Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Japan
Chem. Commun., 2017, Advance Article

DOI: 10.1039/C7CC01011G
Received 08 Feb 2017, Accepted 12 Mar 2017
First published online 13 Mar 2017
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