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A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

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Abstract

A new square-planar zinc oxyhalide, Sr2ZnO2Cl2, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3dx2y2 and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO.

Graphical abstract: A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

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Publication details

The article was received on 08 Feb 2017, accepted on 12 Mar 2017, published on 13 Mar 2017 and first published online on 13 Mar 2017


Article type: Communication
DOI: 10.1039/C7CC01011G
Citation: Chem. Commun., 2017, Advance Article
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    A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

    Y. Su, Y. Tsujimoto, A. Miura, S. Asai, M. Avdeev, H. Ogino, M. Ako, A. A. Belik, T. Masuda, T. Uchikoshi and K. Yamaura, Chem. Commun., 2017, Advance Article , DOI: 10.1039/C7CC01011G

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