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Issue 26, 2017
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The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

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Abstract

The semiconductor optoelectronic properties of an inorganic (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(Bi2S3)9I3)2/3 hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(Bi2S3)9I3)2/3 reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(Bi2S3)9I3)2/3 (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.

Graphical abstract: The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

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Publication details

The article was received on 23 Jan 2017, accepted on 06 Mar 2017 and first published on 08 Mar 2017


Article type: Communication
DOI: 10.1039/C7CC00627F
Citation: Chem. Commun., 2017,53, 3741-3744
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    The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

    C. Ho, Y. Chen, Y. Kuo and C. W. Liu, Chem. Commun., 2017, 53, 3741
    DOI: 10.1039/C7CC00627F

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