The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod
The semiconductor optoelectronic properties of an inorganic (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(Bi2S3)9I3)2/3 hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(Bi2S3)9I3)2/3 reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(Bi2S3)9I3)2/3 (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.