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Identification of Type of Membrane Injury and Cell Death using Whole Cells-Based Proton-Sensitive Field-Effect Transistor Systems

Abstract

A NH4Cl-superfused system for cell-cultured pH-sensing transistor was developed for detecting ion leakage across the plasma membranes of model HepG2 cell. Screening of chemical species by the method developed and conventional membrane-leakage assays identified the type of membrane injury; structural membrane disruption and pore formation. Apoptosis-mediated membrane disordering was detected by continuously monitoring the ion-barrier breakdown of the membranes using the transistor system for an extended period. Comparisons of the ISFET assay with conventional cytotoxicity assays distinguished the cell death by direct membrane injury from that by other organelle damages. Our cell-based transistor system is fast and sensitive to ion leakage of plasma membrane due to the small hydrodynamic size of proton and ammonium ion as the indicators. The combination of the ion leakage assay with existing cytotoxicity assays is a new way of classifying membrane injury and cell death induced by external chemical stimuli.

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Publication details

The article was received on 23 Mar 2017, accepted on 05 Aug 2017 and first published on 08 Aug 2017


Article type: Paper
DOI: 10.1039/C7AN00502D
Citation: Analyst, 2017, Accepted Manuscript
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    Identification of Type of Membrane Injury and Cell Death using Whole Cells-Based Proton-Sensitive Field-Effect Transistor Systems

    Y. Imaizumi, T. Goda, A. Matsumoto and Y. Miyahara, Analyst, 2017, Accepted Manuscript , DOI: 10.1039/C7AN00502D

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