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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices


A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

Corresponding authors
Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea
Research Center for Nano-Materials, DNF Co. Ltd., Daejeon 306-802, South Korea
J. Mater. Chem. C, 2016,4, 10486-10493

DOI: 10.1039/C6TC03725A
Received 29 Aug 2016, Accepted 14 Oct 2016
First published online 14 Oct 2016
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