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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices


Solution-processable Silicon Oxide Gate Dielectric Prepared at Low Temperature via Ultraviolet Irradiation for Indium Zinc Oxide Transistors

J. Mater. Chem. C, 2016, Accepted Manuscript

DOI: 10.1039/C6TC03725A
Received 29 Aug 2016, Accepted 14 Oct 2016
First published online 14 Oct 2016
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