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Issue 44, 2016
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A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

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Abstract

A facile route for the preparation of a solution-processed silicon oxide dielectric from perhydropolysilazane (PHPS) at a low temperature (≤150 °C) is proposed. Deep ultraviolet (DUV) irradiation on the PHPS-derived silicon oxide film, where the coupling agent of vinyltriethoxysilane (VTES) was introduced to assist the formation of the Si–O lattice network at a low temperature, allowed the prepared silicon oxide film to have device-quality insulating properties. The metal/insulator/metal capacitor with DUV-annealed silicon oxide exhibited a low gate leakage current density of 7.0 × 10−8 A cm−2 at 1 MV cm−1, which was attributed to the photon-assisted purification and densification of the silicon oxide film. The suitability of this silicon oxide film as a gate insulator was evaluated in all-solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). The IZO TFTs that were fabricated at a contact annealing temperature of 150 °C exhibited a high field-effect mobility of 17.3 cm2 V−1 s−1, a threshold voltage of 2.7 V, and an ION/OFF modulation ratio of 1 × 105. Therefore, DUV-assisted IZO TFTs with a PHPS-derived silicon oxide insulator are promising candidates for low-temperature, large-area, and flexible electronics for use on inexpensive plastic substrates.

Graphical abstract: A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

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Publication details

The article was received on 29 Aug 2016, accepted on 14 Oct 2016 and first published on 14 Oct 2016


Article type: Paper
DOI: 10.1039/C6TC03725A
Citation: J. Mater. Chem. C, 2016,4, 10486-10493
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    A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

    H. J. Seul, H. Kim, M. Park and J. K. Jeong, J. Mater. Chem. C, 2016, 4, 10486
    DOI: 10.1039/C6TC03725A

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