Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices

Paper

Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

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Corresponding authors
a
Material Science, Engineering and Commercialization, Texas State University, San Marcos, USA
E-mail: m_r424@txstate.edu
b
Department of Physics, University of Illinois at Chicago, Chicago, USA
c
Department of Physics, Texas State University, San Marcos, USA
d
Ingram School of Engineering, Texas State University, San Marcos, USA
J. Mater. Chem. C, 2016,4, 10386-10394

DOI: 10.1039/C6TC03386E
Received 06 Aug 2016, Accepted 05 Oct 2016
First published online 06 Oct 2016
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