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Journal of Materials Chemistry C

Materials for optical, magnetic and electronic devices


Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Corresponding authors
Material Science, Engineering and Commercialization, Texas State University, San Marcos, USA
E-mail: m_r424@txstate.edu
Department of Physics, University of Illinois at Chicago, Chicago, USA
Department of Physics, Texas State University, San Marcos, USA
Ingram School of Engineering, Texas State University, San Marcos, USA
J. Mater. Chem. C, 2016, Advance Article

DOI: 10.1039/C6TC03386E
Received 06 Aug 2016, Accepted 05 Oct 2016
First published online 06 Oct 2016
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