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Issue 43, 2016
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Low-temperature, inkjet printed p-type copper(I) iodide thin film transistors

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Low temperature fabrication of printed p-type CuI TFTs was reported for the first time. The printed CuI film was fabricated by printing molecular CuI ink directly onto the device substrate followed by immediate crystallization of CuI nanoparticles as the solvent evaporated. The substrate temperature during inkjet printing was varied in order to obtain continuous CuI films with large grain size for improved device performance. The CuI TFTs printed at 60 °C exhibited an average field-effect mobility of 1.86 ± 1.6 cm2 V−1 s−1, with the maximum value of 4.4 cm2 V−1 s−1 and an average On/Off ratio of 101–102. This study demonstrates potential low temperature, directly printed p-type TFTs for constructing transparent, complementary inorganic TFT circuits.

Graphical abstract: Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

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The article was received on 29 Jul 2016, accepted on 02 Oct 2016 and first published on 03 Oct 2016

Article type: Paper
DOI: 10.1039/C6TC03234F
Citation: J. Mater. Chem. C, 2016,4, 10309-10314
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    Low-temperature, inkjet printed p-type copper(I) iodide thin film transistors

    C. Choi, J. Y. Gorecki, Z. Fang, M. Allen, S. Li, L. Lin, C. Cheng and C. Chang, J. Mater. Chem. C, 2016, 4, 10309
    DOI: 10.1039/C6TC03234F

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