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Issue 33, 2016
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Biodegradable oxide synaptic transistors gated by a biopolymer electrolyte

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Abstract

Biodegradable oxide synaptic transistors were fabricated on a graphene coated PET substrate. An acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric. With the acid doping, a high proton conductivity of ∼7.6 × 10−4 S cm−1 and a big electric-double-layer capacitance of ∼1.0 μF cm−2 are observed for the biopolymer electrolyte. The fabricated oxide synaptic transistor exhibits good transistor performances, such as a low operation voltage of 1.0 V, a high field-effect mobility of ∼5.4 cm2 V−1 s−1, a high on/off ratio of ∼3.1 × 106 and a low subthreshold swing of ∼80 mV decade−1. With the unique proton gating behaviors, synaptic functions, such as excitatory post-synaptic current, paired-pulse facilitation and synaptic filtering were mimicked. Furthermore, the proposed oxide synaptic transistor could be dissolved in water in a short time. We believe that the proposed biodegradable synaptic transistors could provide new opportunities for low cost, portable “green” neuromorphic electronics.

Graphical abstract: Biodegradable oxide synaptic transistors gated by a biopolymer electrolyte

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Publication details

The article was received on 29 Jun 2016, accepted on 27 Jul 2016 and first published on 27 Jul 2016


Article type: Paper
DOI: 10.1039/C6TC02693A
Citation: J. Mater. Chem. C, 2016,4, 7744-7750
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    Biodegradable oxide synaptic transistors gated by a biopolymer electrolyte

    R. Liu, L. Q. Zhu, W. Wang, X. Hui, Z. P. Liu and Q. Wan, J. Mater. Chem. C, 2016, 4, 7744
    DOI: 10.1039/C6TC02693A

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