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Issue 41, 2016
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Synaptic behaviors mimicked in indium-zinc-oxide transistors gated by high-proton-conducting graphene oxide-based composite solid electrolytes

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Abstract

The large protonic conductivity of proton conductor films is of considerable significance for low-power transistor-based synapse applications. In this work, a 3-triethoxysilylpropylamine graphene-oxide (KH550–GO) solid electrolyte with a protonic conductivity of ∼4.2 × 10−3 S cm−1 is synthesized and proposed to be used as a gate dielectric material for protonic/electronic hybrid synaptic transistors. The microstructure and the electrochemical characteristics of the KH550–GO solid electrolyte are investigated. In addition, the protonic/electronic hybrid synaptic transistor gated by KH550–GO can exhibit excellent electrical performance. Finally, the paired-pulse facilitation, excitatory post-synaptic current, and spike-rate-dependent plasticity of biological synapses are mimicked by such a synaptic transistor, which is, therefore, a promising artificial synapse for synaptic electronics and neuromorphic systems.

Graphical abstract: Synaptic behaviors mimicked in indium-zinc-oxide transistors gated by high-proton-conducting graphene oxide-based composite solid electrolytes

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Publication details

The article was received on 31 May 2016, accepted on 20 Sep 2016 and first published on 20 Sep 2016


Article type: Paper
DOI: 10.1039/C6TC02228F
Citation: J. Mater. Chem. C, 2016,4, 9762-9770
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    Synaptic behaviors mimicked in indium-zinc-oxide transistors gated by high-proton-conducting graphene oxide-based composite solid electrolytes

    L. Guo, J. Wen, G. Cheng, N. Yuan and J. Ding, J. Mater. Chem. C, 2016, 4, 9762
    DOI: 10.1039/C6TC02228F

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