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Issue 11, 2016
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High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

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Abstract

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W−1 under 800 nm light illumination with an external quantum efficiency of 4.65 × 104% and a detectivity of 6 × 109 Jones, as well as fast rise and decay times (τrise = 36 ms and τdecay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.

Graphical abstract: High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

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Publication details

The article was received on 28 Dec 2015, accepted on 18 Feb 2016 and first published on 19 Feb 2016


Article type: Communication
DOI: 10.1039/C5TC04410C
Citation: J. Mater. Chem. C, 2016,4, 2111-2116
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    High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

    X. Zhou, L. Gan, Q. Zhang, X. Xiong, H. Li, Z. Zhong, J. Han and T. Zhai, J. Mater. Chem. C, 2016, 4, 2111
    DOI: 10.1039/C5TC04410C

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