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Issue 9, 2016
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DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

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Abstract

This report discusses the voltage-stability of the dielectric and transport properties of BaTiO3–Bi(Zn1/2Ti1/2)O3 (BT–BZT) ceramics which have shown excellent properties for emerging energy applications. For p-type BaTiO3, the ceramics deviated from Ohm's law behavior at very low voltage levels along with a reversible drop in bulk resistivity by several orders of magnitude starting at bias fields as low as 0.1 kV cm−1 (∼8 V). In contrast, n-type BT–BZT ceramics exhibited a small (i.e. less than one order of magnitude) increase in resistivity on application of small field levels. These data indicate a hole-generation mechanism which becomes active at a low voltage threshold. The bulk capacitance values calculated using AC impedance spectroscopy, however, were relatively unaffected (<15% change) by this application of a DC bias (up to ∼0.25 kV cm−1). These findings provide important insights into the electric transport mechanisms in BT-based ceramics.

Graphical abstract: DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

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Publication details

The article was received on 14 Dec 2015, accepted on 09 Feb 2016 and first published on 10 Feb 2016


Article type: Communication
DOI: 10.1039/C5TC04247J
Citation: J. Mater. Chem. C, 2016,4, 1782-1786
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    DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

    N. Kumar, E. A. Patterson, T. Frömling and D. P. Cann, J. Mater. Chem. C, 2016, 4, 1782
    DOI: 10.1039/C5TC04247J

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