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Issue 46, 2016
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Band alignment engineering for high-energy-density solid-state asymmetric supercapacitors with TiO2 insertion at the ZnO/Ni(OH)2 interface

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Abstract

In this paper, an adaptive interface electronic band structure was proposed for improving the capacitance of nano-architectured Ni(OH)2 by introducing a TiO2 embedding layer at the ZnO/Ni(OH)2 interface. A stair-like band alignment was designed to reduce the electron interface transport barrier and induce efficient electron-injection through the interface to the reaction region when it is charging. Consequently, the activation energy of reduction dropped, which further brought about a decreased equilibrium potential (Eeq) depending on the Butler–Volmer model of electrode kinetics. As expected, a superior capacitance of 1981 F g−1 at 2 A g−1 was triggered. After that, this advanced electrode was assembled in an asymmetric cell with a ZnO@Fe2O3 based negative electrode; the as-fabricated device delivered a high energy density of 52.2 W h kg−1 at a power density of 1.3 kW kg−1 within the voltage range of 0–1.6 V as well as a good cycling performance (96.6% capacity retention after 5000 cycles). These features demonstrate that suitable interface engineering may open up new opportunities in the development of high-performance supercapacitors.

Graphical abstract: Band alignment engineering for high-energy-density solid-state asymmetric supercapacitors with TiO2 insertion at the ZnO/Ni(OH)2 interface

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Publication details

The article was received on 05 Sep 2016, accepted on 19 Oct 2016 and first published on 19 Oct 2016


Article type: Paper
DOI: 10.1039/C6TA07646G
Citation: J. Mater. Chem. A, 2016,4, 17981-17987
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    Band alignment engineering for high-energy-density solid-state asymmetric supercapacitors with TiO2 insertion at the ZnO/Ni(OH)2 interface

    X. Zheng, X. Yan, Y. Sun, Y. Li, M. Li, G. Zhang and Y. Zhang, J. Mater. Chem. A, 2016, 4, 17981
    DOI: 10.1039/C6TA07646G

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