Issue 43, 2016

High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

Abstract

Interfacial engineering is an important method to achieve compact and smooth high-quality perovskite films in a one-step method. In this work, we first demonstrate that lead monoxide (PbO) as an interfacial modification material could convert to perovskite crystal seeds and induce the growth of the CH3NH3PbI3−xClx absorber layer. The introduction of the perovskite crystal seeds resulted in a dramatically enhanced coverage and a large grain size of the perovskite films. The PL lifetime measurements verified reduced trap states of the perovskite thin films and enhanced charge transfer at the TiO2/perovskite interface. With a high quality perovskite thin film, the planar perovskite solar cell showed a remarkably improved power conversion efficiency (PCE) of 17.03%. Moreover, the device with PbO as an interfacial layer exhibited superior UV-stability, maintaining 60% of the initial PCE under intensive UV irradiation for 180 min while the control device was almost exhausted.

Graphical abstract: High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

Supplementary files

Article information

Article type
Paper
Submitted
06 Aug 2016
Accepted
25 Sep 2016
First published
26 Sep 2016

J. Mater. Chem. A, 2016,4, 16913-16919

High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

X. Liang, W. Li, J. Li, G. Niu and L. Wang, J. Mater. Chem. A, 2016, 4, 16913 DOI: 10.1039/C6TA06735B

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