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Issue 43, 2016
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High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

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Abstract

Interfacial engineering is an important method to achieve compact and smooth high-quality perovskite films in a one-step method. In this work, we first demonstrate that lead monoxide (PbO) as an interfacial modification material could convert to perovskite crystal seeds and induce the growth of the CH3NH3PbI3−xClx absorber layer. The introduction of the perovskite crystal seeds resulted in a dramatically enhanced coverage and a large grain size of the perovskite films. The PL lifetime measurements verified reduced trap states of the perovskite thin films and enhanced charge transfer at the TiO2/perovskite interface. With a high quality perovskite thin film, the planar perovskite solar cell showed a remarkably improved power conversion efficiency (PCE) of 17.03%. Moreover, the device with PbO as an interfacial layer exhibited superior UV-stability, maintaining 60% of the initial PCE under intensive UV irradiation for 180 min while the control device was almost exhausted.

Graphical abstract: High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

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Publication details

The article was received on 06 Aug 2016, accepted on 25 Sep 2016 and first published on 26 Sep 2016


Article type: Paper
DOI: 10.1039/C6TA06735B
Citation: J. Mater. Chem. A, 2016,4, 16913-16919
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    High quality perovskite thin films induced by crystal seeds with lead monoxide interfacial engineering

    X. Liang, W. Li, J. Li, G. Niu and L. Wang, J. Mater. Chem. A, 2016, 4, 16913
    DOI: 10.1039/C6TA06735B

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