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Issue 31, 2016
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Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

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Abstract

Recent progress has shown that low-temperature processed tin oxide (SnO2) is an excellent electron selective layer (ESL) material for fabricating highly efficient organic–inorganic metal-halide perovskite solar cells with a planar cell structure. Low-temperature processing and a planar cell structure are desirable characteristics for large-scale device manufacturing due to their associated low costs and processing simplicity. Here, we report that plasma-enhanced atomic layer deposition (PEALD) is able to lower the deposition temperature of SnO2 ESLs to below 100 °C and still achieve high device performance. With C60-self-assembled monolayer passivation, our PEALD SnO2 ESLs deposited at ∼100 °C led to average power conversion efficiencies higher than 18% (maximum of 19.03%) and 15% (maximum of 16.80%) under reverse voltage scan for solar cells fabricated on glass and flexible polymer substrates, respectively. Our results thus demonstrate the potential of the low-temperature PEALD process of SnO2 ESLs for large-scale manufacturing of efficient perovskite solar cells.

Graphical abstract: Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

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Publication details

The article was received on 31 May 2016, accepted on 09 Jul 2016 and first published on 11 Jul 2016


Article type: Paper
DOI: 10.1039/C6TA04503K
Citation: J. Mater. Chem. A, 2016,4, 12080-12087
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    Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells

    C. Wang, D. Zhao, C. R. Grice, W. Liao, Y. Yu, A. Cimaroli, N. Shrestha, P. J. Roland, J. Chen, Z. Yu, P. Liu, N. Cheng, R. J. Ellingson, X. Zhao and Y. Yan, J. Mater. Chem. A, 2016, 4, 12080
    DOI: 10.1039/C6TA04503K

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