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RSC Advances

An international journal to further the chemical sciences

Paper

The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth

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Corresponding authors
a
State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
E-mail: cxiufang365@126.com, sunhg@sdu.edu.cn, zhaoxian@sdu.edu.cn
Fax: +86-531-88364864
Tel: +86-531-88366330
b
School of Mechanical, Electrical & Information Engineering, Shandong University, Weihai, China
c
Institute of Optics and Electronics, Chinese Academy of Science, Chengdu, China
RSC Adv., 2016,6, 100908-100915

DOI: 10.1039/C6RA21858J
Received 31 Aug 2016, Accepted 19 Oct 2016
First published online 19 Oct 2016
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Supplementary Info