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RSC Advances

An international journal to further the chemical sciences


The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth

Corresponding authors
State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
E-mail: cxiufang365@126.com, sunhg@sdu.edu.cn, zhaoxian@sdu.edu.cn
Fax: +86-531-88364864
Tel: +86-531-88366330
School of Mechanical, Electrical & Information Engineering, Shandong University, Weihai, China
Institute of Optics and Electronics, Chinese Academy of Science, Chengdu, China
RSC Adv., 2016,6, 100908-100915

DOI: 10.1039/C6RA21858J
Received 31 Aug 2016, Accepted 19 Oct 2016
First published online 19 Oct 2016
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Supplementary Info