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Issue 103, 2016
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Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

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Abstract

A simple method that enables the direct fabrication of few layer graphene on SiO2/Si substrates by implantation of C ions is explored. The C ions of 80 keV with the fluencies of 1.2 to 2 × 1016 ions per cm2 were implanted under the high vacuum directly onto the 200 nm thick Ni film deposited on SiO2/Si substrates. The growth proceeds via the dissolution of C atoms into bulk Ni film that diffuse out towards both sides of Ni surface and pushing the C atoms to precipitate out by rapid annealing and cooling. As a result, the graphene growth takes place both on the top of the Ni film and at the interface of Ni/SiO2 film. This direct synthesis of the graphene on SiO2 is achieved by etching out the top Ni film. Raman and X-ray photoelectron spectroscopy investigations provide an evidence of strong resilience of the graphene to ion implantation. These results demonstrate that the feasibility C ion implantation technique is a viable route to define graphene directly on insulating substrates with controlled thickness for electronic device applications.

Graphical abstract: Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

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Publication details

The article was received on 08 Aug 2016, accepted on 15 Oct 2016 and first published on 17 Oct 2016


Article type: Paper
DOI: 10.1039/C6RA20015J
Citation: RSC Adv., 2016,6, 101347-101352
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    Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

    P. Dharmaraj, P. S. Venkatesh, P. Kumar, K. Asokan and K. Jeganathan, RSC Adv., 2016, 6, 101347
    DOI: 10.1039/C6RA20015J

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