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Issue 77, 2016
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Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

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Abstract

Hexagonal boron nitride (h-BN) has considerable potential for applications owing to its attractive features including good thermal conductivity, chemical stability, and unique optical properties. However, because h-BN is chemically inert and thermally stable, it is hard to synthesize boron nitride quantum dots (BNQDs) using chemical methods such as oxidation, hetero-atom doping or functionalization. Here, we report a defect engineering method to synthesize BNQDs from h-BN using physical energy sources including an impinging process of heated iron nanoparticles, microwave irradiation and sonication. Furthermore, edge-hydroxylated functionalization was employed to enhance the intracellular uptake of the BNQDs in cells for bioimaging. The edge-hydroxylated BNQDs (EH-BNQDs) showed blue colored photoluminescence with 325 nm laser excitation, good cytotoxicity performance with approximately 100% cell viability, and a good attachment to cell surfaces. The successful endocytosis of EH-BNQDs using a cancer cell line was also demonstrated.

Graphical abstract: Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

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Publication details

The article was received on 13 May 2016, accepted on 19 Jul 2016 and first published on 21 Jul 2016


Article type: Paper
DOI: 10.1039/C6RA12455K
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Citation: RSC Adv., 2016,6, 73939-73946
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    Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

    J. Jung, M. Kotal, M. Jang, J. Lee, Y. Cho, W. Kim and I. Oh, RSC Adv., 2016, 6, 73939
    DOI: 10.1039/C6RA12455K

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