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Issue 4, 2017
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Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment

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Abstract

HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 105, a field effect mobility increase from 2.16 to 3.04 cm2 V−1 s−1, a subthreshold swing improvement from 30.6 to 4.8 V dec−1, and a positive threshold voltage shift between depletion mode and enhancement mode, from −7.02 to 11.5 V. The plasma-treated HfSe2 photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.

Graphical abstract: Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment

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Publication details

The article was received on 28 Oct 2016, accepted on 16 Dec 2016 and first published on 23 Dec 2016


Article type: Paper
DOI: 10.1039/C6NR08467B
Citation: Nanoscale, 2017,9, 1645-1652
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    Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment

    M. Kang, S. Rathi, I. Lee, L. Li, M. A. Khan, D. Lim, Y. Lee, J. Park, S. J. Yun, D. Youn, C. Jun and G. Kim, Nanoscale, 2017, 9, 1645
    DOI: 10.1039/C6NR08467B

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