Nanoscale

A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology

Paper

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

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Corresponding authors
a
Department of Physics, Case Western Reserve University, Cleveland, USA
E-mail: xuan.gao@case.edu
b
Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
c
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
d
Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
e
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
f
Department of Physics, University of Northern Iowa, Cedar Falls, USA
Nanoscale, 2016,8, 19050-19057

DOI: 10.1039/C6NR07098A
Received 07 Sep 2016, Accepted 14 Oct 2016
First published online 18 Oct 2016
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