Jump to main content
Jump to site search


A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology


Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test

Yang Lu,a   Jong Ho Lee,a   Xiang Yanga and   I-Wei Chen*a  
Corresponding authors
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, USA
E-mail: iweichen@seas.upenn.edu
Nanoscale, 2016,8, 18113-18120

DOI: 10.1039/C6NR06427B
Received 14 Aug 2016, Accepted 25 Sep 2016
First published online 26 Sep 2016

This article is part of themed collection: 2016 Nanoscale HOT Article Collection
Please wait while Download options loads

Supplementary Info