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Issue 42, 2016
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Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

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Abstract

Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L–1L and 4L–1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 103 μA μm−1 with the fixed off-state current of 10 pA μm−1. It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs.

Graphical abstract: Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

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Publication details

The article was received on 20 Jul 2016, accepted on 01 Oct 2016 and first published on 05 Oct 2016


Article type: Paper
DOI: 10.1039/C6NR05734A
Citation: Nanoscale, 2016,8, 18180-18186
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    Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

    F. Liu, J. Wang and H. Guo, Nanoscale, 2016, 8, 18180
    DOI: 10.1039/C6NR05734A

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