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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology


Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

Fei Liu,*ab   Jian Wanga and   Hong Guobc  
Corresponding authors
Department of Physics, The University of Hong Kong, Hong Kong, China
E-mail: fliu003@gmail.com
Department of Physics, McGill University, Montreal, Canada
School of Physics & Energy, Shenzhen University, Shenzhen 518060, China
Nanoscale, 2016, Advance Article

DOI: 10.1039/C6NR05734A
Received 20 Jul 2016, Accepted 01 Oct 2016
First published online 05 Oct 2016
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