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Issue 47, 2016
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Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

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Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

Graphical abstract: Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

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Publication details

The article was received on 26 Jun 2016, accepted on 29 Oct 2016 and first published on 31 Oct 2016


Article type: Paper
DOI: 10.1039/C6NR05100F
Citation: Nanoscale, 2016,8, 19910-19916
  • Open access: Creative Commons BY license
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    Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

    E. Tóvári, P. Makk, M. Liu, P. Rickhaus, Z. Kovács-Krausz, K. Richter, C. Schönenberger and S. Csonka, Nanoscale, 2016, 8, 19910
    DOI: 10.1039/C6NR05100F

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