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Issue 36, 2016
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Electron beam directed etching of hexagonal boron nitride

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Abstract

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Graphical abstract: Electron beam directed etching of hexagonal boron nitride

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Publication details

The article was received on 20 Jun 2016, accepted on 30 Aug 2016 and first published on 01 Sep 2016


Article type: Communication
DOI: 10.1039/C6NR04959A
Citation: Nanoscale, 2016,8, 16182-16186
  • Open access: Creative Commons BY-NC license
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    Electron beam directed etching of hexagonal boron nitride

    C. Elbadawi, T. T. Tran, M. Kolíbal, T. Šikola, J. Scott, Q. Cai, L. H. Li, T. Taniguchi, K. Watanabe, M. Toth, I. Aharonovich and C. Lobo, Nanoscale, 2016, 8, 16182
    DOI: 10.1039/C6NR04959A

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