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Issue 32, 2016
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Biodegradable resistive switching memory based on magnesium difluoride

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Abstract

This study presents a new type of resistive switching memory device that can be used in biodegradable electronic applications. The biodegradable device features magnesium difluoride as the active layer and iron and magnesium as the corresponding electrodes. This is the first report on magnesium difluoride as a resistive switching layer. With on–off ratios larger than one hundred, the device on silicon switches at voltages less than one volt and requires only sub-mA programming current. AC endurance of 103 cycles is demonstrated with ±1 V voltage pulses. The switching mechanism is attributed to the formation and rupture of conductive filaments comprising fluoride vacancies in magnesium difluoride. Devices fabricated on a flexible polyethylene terephthalate substrate are tested for functionality, and degradation is subsequently demonstrated in de-ionized water. An additional layer of magnesium difluoride is used to hinder the degradation and extend the lifetime of the device.

Graphical abstract: Biodegradable resistive switching memory based on magnesium difluoride

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Publication details

The article was received on 14 May 2016, accepted on 14 Jul 2016 and first published on 18 Jul 2016


Article type: Paper
DOI: 10.1039/C6NR03913H
Citation: Nanoscale, 2016,8, 15048-15055
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    Biodegradable resistive switching memory based on magnesium difluoride

    Z. Zhang, M. Tsang and I. Chen, Nanoscale, 2016, 8, 15048
    DOI: 10.1039/C6NR03913H

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