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Issue 18, 2016
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Controlling the ripple density and heights: a new way to improve the electrical performance of CVD-grown graphene

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Abstract

We report a new way to enhance the electrical performances of large area CVD-grown graphene through controlling the ripple density and heights after transfer onto SiO2/Si substrates by employing different cooling rates during fabrication. We find that graphene films prepared with a high cooling rate have reduced ripple density and heights and improved electrical characteristics such as higher electron/hole mobilities as well as reduced sheet resistance. The corresponding Raman analysis also shows a significant decrease of the defects when a higher cooling rate is employed. We suggest a model that explains the improved morphology of the graphene film obtained with higher cooling rates. From these points of view, we can suggest a new pathway toward a relatively lower density and heights of ripples in order to reduce the flexural phonon–electron scattering effect, leading to higher lateral carrier mobilities.

Graphical abstract: Controlling the ripple density and heights: a new way to improve the electrical performance of CVD-grown graphene

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Publication details

The article was received on 26 Jan 2016, accepted on 13 Apr 2016 and first published on 13 Apr 2016


Article type: Paper
DOI: 10.1039/C6NR00706F
Citation: Nanoscale, 2016,8, 9822-9827
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    Controlling the ripple density and heights: a new way to improve the electrical performance of CVD-grown graphene

    W. Park, I. Jo, B. H. Hong and H. Cheong, Nanoscale, 2016, 8, 9822
    DOI: 10.1039/C6NR00706F

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