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Issue 12, 2016
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Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

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Abstract

It is shown that coating graphene–silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm−2) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.

Graphical abstract: Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

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Publication details

The article was received on 23 Dec 2015, accepted on 25 Feb 2016 and first published on 26 Feb 2016


Article type: Communication
DOI: 10.1039/C5NR09143H
Citation: Nanoscale, 2016,8, 6473-6478
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    Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

    S. Yavuz, C. Kuru, D. Choi, A. Kargar, S. Jin and P. R. Bandaru, Nanoscale, 2016, 8, 6473
    DOI: 10.1039/C5NR09143H

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