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Issue 6, 2016
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Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

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Abstract

Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for understanding the carrier transport through the metal–black phosphorus junction. A thorough understanding and proper evaluation of the performance potential of both p- and n-types are highly desirable. In this paper, we investigate the temperature dependent ambipolar operation of both electron and hole transport from 300 K to 20 K. On-currents as high as 85 μA μm−1 for a 0.2 μm channel length BP nFET at 300 K are observed. Moreover, we provide the first systematic study on the low frequency noise mechanisms for both n-channel and p-channel BP transistors. The dominated noise mechanisms of the multi-layer BP nFET and pFET are mobility fluctuation and carrier number fluctuations with correlated mobility fluctuations, respectively. We have also established a baseline of the low electrical noise of 8.1 × 10−9 μm2 Hz−1 at 10 Hz at room temperature for BP pFETs, which is 3 times improvement over previous reports, and 7.0 × 10−8 μm2 Hz−1 for BP nFETs for the first time.

Graphical abstract: Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

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Publication details

The article was received on 25 Sep 2015, accepted on 08 Jan 2016 and first published on 08 Jan 2016


Article type: Paper
DOI: 10.1039/C5NR06647F
Citation: Nanoscale, 2016,8, 3572-3578
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    Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

    X. Li, Y. Du, M. Si, L. Yang, S. Li, T. Li, X. Xiong, P. Ye and Y. Wu, Nanoscale, 2016, 8, 3572
    DOI: 10.1039/C5NR06647F

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