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Issue 4, 2017
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An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

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Abstract

One of the primary challenges for high-quality metal chalcogenide film growth by a chemical solution approach is to avoid the use of volatile/hazardous organic solvents during the fabrication processes. Herein, we demonstrate an organic solvent-free solution processing method which has the ability to enable growth of a diverse range of metal chalcogenide films. The processing solution is prepared by combining the required metal ions with non-volatile and non-flammable ionic liquid precursor solutions. These stable and homogeneous solutions can form a variety of high-quality and uniform metal chalcogenide films. Due to the facile and instant control of the stoichiometry used in this method, the band gap of multi-element compound semiconductors, for example quinary Cu2ZnSn(S,Se)4, can be easily tuned from 1.01 eV of Cu2ZnSnSe4 to 1.52 eV of Cu2ZnSnS4. The resulting film also shows high hole mobility with a maximum of 56.9 cm2 V−1 s−1 for a carrier concentration of 3.24 × 1016 cm−3 at room temperature. Cu2ZnSnS4-based solar cells displayed an efficiency of 5.68%, which is comparable to the reported efficiencies of solar cells prepared by methods involving organic solvents (5.0–6.4%).

Graphical abstract: An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

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Publication details

The article was received on 06 Sep 2016, accepted on 12 Dec 2016 and first published on 12 Dec 2016


Article type: Paper
DOI: 10.1039/C6GC02489K
Citation: Green Chem., 2017,19, 946-951
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    An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

    J. Zhao, I. Jeon, Q. Yi, M. Jain, M. H. Rummeli, P. Song, Y. Matsuo and G. Zou, Green Chem., 2017, 19, 946
    DOI: 10.1039/C6GC02489K

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