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Significantly enhanced photocurrent for water oxidation in monolithic Mo:BiVO4/SnO2/Si by thermally increasing the minority carrier diffusion length

Corresponding authors
Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305, USA
Tel: +1-650-725-7515
Energy Environ. Sci., 2016, Advance Article

DOI: 10.1039/C6EE00036C
Received 05 Jan 2016, Accepted 27 Jan 2016
First published online 28 Jan 2016
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