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Issue 46, 2016
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Low-temperature atomic layer deposition of crystalline manganese oxide thin films

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Abstract

We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10 and ozone as precursors to fabricate crystalline α-Mn2O3 and Mn3O4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4 thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.

Graphical abstract: Low-temperature atomic layer deposition of crystalline manganese oxide thin films

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Publication details

The article was received on 01 Aug 2016, accepted on 19 Sep 2016 and first published on 19 Sep 2016


Article type: Paper
DOI: 10.1039/C6DT03040H
Citation: Dalton Trans., 2016,45, 18737-18741
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    Low-temperature atomic layer deposition of crystalline manganese oxide thin films

    H. Jin, D. Hagen and M. Karppinen, Dalton Trans., 2016, 45, 18737
    DOI: 10.1039/C6DT03040H

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