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Issue 42, 2016
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Magnetic field effects of photocarrier generation in bulk heterojunctions at low temperature

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Abstract

We report an experimental investigation of the magnetic field effect (MFE) in polymer bulk heterojunction devices at temperatures below 10 K using photocarrier extraction by linearly increasing voltages. The examined devices were composed of an active layer of poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester. In the experiments, the delay time (td) dependence of the MFE was investigated in detail. For td < 80 μs, a positive MFE was observed in the field region B < 0.1 T and a negative MFE was observed for B > 0.2 T. For td > 8 ms, only a positive MFE proportional to B2 was observed. For the photocurrent pulse detected immediately after light irradiation, the MFE was negligibly small. In a high magnetic field of 15 T, a significant MFE exceeding 80% was observed at 1.8 K for td = 800 ms. We discuss the results based on a model of triplet–singlet (or singlet–triplet) conversion in the magnetic field and estimate the exchange integral for the charge-transfer exciton in this photovoltaic cell.

Graphical abstract: Magnetic field effects of photocarrier generation in bulk heterojunctions at low temperature

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Publication details

The article was received on 27 May 2016, accepted on 25 Jul 2016 and first published on 03 Aug 2016


Article type: Paper
DOI: 10.1039/C6DT02132H
Citation: Dalton Trans., 2016,45, 16616-16623
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    Magnetic field effects of photocarrier generation in bulk heterojunctions at low temperature

    H. Tajima, Y. Nishioka, S. Sato, T. Suzuki and M. Kimata, Dalton Trans., 2016, 45, 16616
    DOI: 10.1039/C6DT02132H

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