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Issue 44, 2016
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Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

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Abstract

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current–voltage (IV) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 104, which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 104 read pulses and possessed a retention time of over 105 s, indicative of the memory stability of the device. In the OFF state, the IV curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the IV characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

Graphical abstract: Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

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Publication details

The article was received on 05 Sep 2016, accepted on 18 Oct 2016 and first published on 19 Oct 2016


Article type: Paper
DOI: 10.1039/C6CP06084F
Citation: Phys. Chem. Chem. Phys., 2016,18, 30808-30814
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    Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

    Y. Sun, J. Lu, C. Ai, D. Wen and X. Bai, Phys. Chem. Chem. Phys., 2016, 18, 30808
    DOI: 10.1039/C6CP06084F

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