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An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations

Zhun Liu,a   Ru-Zhi Wang*a and   Peter Zapol*b  
Corresponding authors
College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
E-mail: wrz@bjut.edu.cn
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Illinois 60439, USA
E-mail: zapol@anl.gov
Phys. Chem. Chem. Phys., 2016, Advance Article

DOI: 10.1039/C6CP04479D
Received 26 Jun 2016, Accepted 27 Sep 2016
First published online 12 Oct 2016
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