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Issue 25, 2016
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Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces – analytical study combined with molecular dynamics simulation

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Abstract

Interfacial thermal resistance presents great challenges to the thermal management of modern electronics. In this work, we perform an analytical study to enhance the thermal boundary conductance (TBC) of nanostructured interfaces with square-shape pillar arrays, extendable to the characteristic lengths that can be fabricated in practice. As a representative system, we investigate a SiC substrate with the square-shape pillar array combined with epitaxial GaN as the nanostructured interface. By applying a first-order ray tracing method and molecular dynamics simulations to analyze phonon incidence and transmission at the nanostructured interface, we systematically study the impact of the characteristic dimensions of the pillar array on the TBC. Based on the multi-scale analysis we provide a general guideline to optimize the nanostructured interfaces to achieve higher TBC, demonstrating that the optimized TBC value of the nanostructured SiC/GaN interfaces can be 42% higher than that of the planar SiC/GaN interfaces without nanostructures. The model used and results obtained in this study will guide the further experimental realization of nanostructured interfaces for better thermal management in microelectronics.

Graphical abstract: Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces – analytical study combined with molecular dynamics simulation

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Publication details

The article was received on 22 Mar 2016, accepted on 24 May 2016 and first published on 08 Jun 2016


Article type: Paper
DOI: 10.1039/C6CP01927G
Citation: Phys. Chem. Chem. Phys., 2016,18, 16794-16801
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    Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces – analytical study combined with molecular dynamics simulation

    E. Lee, T. Zhang, M. Hu and T. Luo, Phys. Chem. Chem. Phys., 2016, 18, 16794
    DOI: 10.1039/C6CP01927G

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