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Design and understanding of solid-state and crystalline materials


Origin of surface defects and influence of in-situ deposited SiN nanomask on properties of strained AlGaN/GaN heterostructures grown on Si(111) using MetalOrganic Vapour Phase Epitaxy

CrystEngComm, 2016, Accepted Manuscript

DOI: 10.1039/C6CE01804A
Received 18 Aug 2016, Accepted 17 Oct 2016
First published online 17 Oct 2016
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