Full Text
Advanced Search
Work has begun on improving our website! Close the message box
Our website is evolving and our goal is to create a great user experience for our readers and authors. You will see regular enhancements to our site in the coming months.
Please visit our news site for further information.


Design and understanding of solid-state and crystalline materials


Origin of surface defects and influence of in-situ deposited SiN nanomask on properties of strained AlGaN/GaN heterostructures grown on Si(111) using MetalOrganic Vapour Phase Epitaxy

CrystEngComm, 2016, Accepted Manuscript

DOI: 10.1039/C6CE01804A
Received 18 Aug 2016, Accepted 17 Oct 2016
First published online 17 Oct 2016
Please wait while Download options loads
This article has not yet been cited.