CrystEngComm

Design and understanding of solid-state and crystalline materials

Paper

Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy

*
Corresponding authors
a
The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
E-mail: tomasz.szymanski@pwr.edu.pl
b
The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
CrystEngComm, 2016,18, 8747-8755

DOI: 10.1039/C6CE01804A
Received 18 Aug 2016, Accepted 17 Oct 2016
First published online 17 Oct 2016
Please wait while Download options loads