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Issue 42, 2016
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Epitaxial silicides: the case of Fe, Ni, and Ti

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Abstract

Ultra-thin epitaxial silicides were formed and their structures were examined by electron microscopy and X-ray diffraction. The epitaxial relationship between the silicides and Si was discovered and examined by electron diffraction patterns. The thickness of the silicide can be controlled by a double-sputtering process, rather than by the amount of deposited metals. Intermediate and low temperature phase silicides (C40-TiSi2 and Fe2Si) were observed, suggesting that process control is also an important factor, rather than the symmetry between the crystal structures of Si and silicide. This study is constructive to the basic understanding of the initial stage of the reaction that leads to epitaxial films on Si, as well as the epitaxial relationship of the crystalline layers. The observations may be useful for future design and application of nano-MOSFET and optoelectronics.

Graphical abstract: Epitaxial silicides: the case of Fe, Ni, and Ti

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Publication details

The article was received on 15 Jun 2016, accepted on 13 Sep 2016, published on 16 Sep 2016 and first published online on 16 Sep 2016


Article type: Communication
DOI: 10.1039/C6CE01375A
Citation: CrystEngComm, 2016,18, 8155-8158
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    Epitaxial silicides: the case of Fe, Ni, and Ti

    C. Hsin and Y. Tsai, CrystEngComm, 2016, 18, 8155
    DOI: 10.1039/C6CE01375A

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