Issue 88, 2016

High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Abstract

We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of ∼1.9 cm2 V−1 s−1 is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.

Graphical abstract: High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Supplementary files

Article information

Article type
Communication
Submitted
09 Aug 2016
Accepted
11 Oct 2016
First published
11 Oct 2016

Chem. Commun., 2016,52, 13012-13015

High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

H. A. Um, J. H. Lee, H. Baik, M. J. Cho and D. H. Choi, Chem. Commun., 2016, 52, 13012 DOI: 10.1039/C6CC06550C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements