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Chemical Communications

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High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Corresponding authors
Department of Chemistry, Research Institute for Natural Sciences, Korea University, 5 Anam-dong, Sungbuk-gu, Republic of Korea
E-mail: chominju@korea.ac.kr, dhchoi8803@korea.ac.kr
Division of Analytical Research, Korea Basic Science Institute, 74 Inchon-ro, Sungbuk-gu, Republic of Korea
Chem. Commun., 2016, Advance Article

DOI: 10.1039/C6CC06550C
Received 09 Aug 2016, Accepted 11 Oct 2016
First published online 11 Oct 2016
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