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Communication

High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

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Corresponding authors
a
Department of Chemistry, Research Institute for Natural Sciences, Korea University, 5 Anam-dong, Sungbuk-gu, Republic of Korea
E-mail: chominju@korea.ac.kr, dhchoi8803@korea.ac.kr
b
Division of Analytical Research, Korea Basic Science Institute, 74 Inchon-ro, Sungbuk-gu, Republic of Korea
Chem. Commun., 2016,52, 13012-13015

DOI: 10.1039/C6CC06550C
Received 09 Aug 2016, Accepted 11 Oct 2016
First published online 11 Oct 2016
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