Full Text
Advanced Search
Work has begun on improving our website! Close the message box
Our website is evolving and our goal is to create a great user experience for our readers and authors. You will see regular enhancements to our site in the coming months.
Please visit our news site for further information.

Chemical Communications

Urgent high quality communications from across the chemical sciences.


High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

Corresponding authors
Department of Chemistry, Research Institute for Natural Sciences, Korea University, 5 Anam-dong, Sungbuk-gu, Republic of Korea
E-mail: chominju@korea.ac.kr, dhchoi8803@korea.ac.kr
Division of Analytical Research, Korea Basic Science Institute, 74 Inchon-ro, Sungbuk-gu, Republic of Korea
Chem. Commun., 2016, Advance Article

DOI: 10.1039/C6CC06550C
Received 09 Aug 2016, Accepted 11 Oct 2016
First published online 11 Oct 2016
Please wait while Download options loads
This article has not yet been cited.

Supplementary Info