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Issue 88, 2016
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High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

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Abstract

We propose a novel tricyanovinyldihydrofuran (TCF)-based molecule called DBOB-DTCF that is designed and synthesized for application in n-type field-effect transistors (FETs). It can be operated in a stable manner under ambient conditions. DBOB-DTCF is successfully fabricated as crystalline microplates (CMs) because of its capability of self-assembly. A high electron mobility of ∼1.9 cm2 V−1 s−1 is observed for a CM-based FET, measured under ambient conditions. This suggests that TCF is an excellent acceptor unit that organizes air stable n-type organic semiconductors.

Graphical abstract: High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

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Publication details

The article was received on 09 Aug 2016, accepted on 11 Oct 2016 and first published on 11 Oct 2016


Article type: Communication
DOI: 10.1039/C6CC06550C
Citation: Chem. Commun., 2016,52, 13012-13015
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    High-performance n-type field-effect transistors based on a highly crystalline tricyanovinyldihydrofuran derivative

    H. A. Um, J. H. Lee, H. Baik, M. J. Cho and D. H. Choi, Chem. Commun., 2016, 52, 13012
    DOI: 10.1039/C6CC06550C

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