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Issue 87, 2016
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Low-temperature-grown p–n ZnO nanojunction arrays as rapid and self-driven UV photodetectors

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Abstract

In this study p-type ZnO nanorod (NR) arrays were grown using a low-temperature hydrothermal method in the presence of various concentrations of Sb in the doping solution. X-ray photoelectron spectroscopy revealed the atomic percentages and chemical states of the Sb dopant atoms in the p-type ZnO NR arrays. Photoluminescence and electrical measurements confirmed the p-type characteristics of the Sb-doped ZnO NR arrays. Sequential growth of n- and p-ZnO was then implemented to form p–n ZnO nanojunction arrays. The photovoltaic properties of the p–n ZnO nanojunction devices were investigated under 365 nm UV light; the short-circuit current densities and open-circuit voltages exhibited linear and logarithmic dependence, respectively, on the power density of the UV light. In addition, the p–n ZnO nanojunction devices displayed a rapid response to UV light at zero bias, with a linear correlation between the responsivity and the incident light power. Such low-temperature growth of p–n ZnO nanojunctions appears to be a facile strategy for fabricating junctioned nanostructures with applications in energy-harvesting and self-driven photodetecting optoelectronics.

Graphical abstract: Low-temperature-grown p–n ZnO nanojunction arrays as rapid and self-driven UV photodetectors

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Publication details

The article was received on 11 Aug 2016, accepted on 29 Sep 2016 and first published on 30 Sep 2016


Article type: Communication
DOI: 10.1039/C6CC06347K
Citation: Chem. Commun., 2016,52, 12853-12856
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    Low-temperature-grown p–n ZnO nanojunction arrays as rapid and self-driven UV photodetectors

    M. Lu, H. Chen, C. Tsai, Y. Tseng, Y. Kuo, H. Wang and M. Lu, Chem. Commun., 2016, 52, 12853
    DOI: 10.1039/C6CC06347K

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