Issue 33, 2016
From the journal:

Chemical Communications

Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy†

Yi-Chia Chou,*abc   Federico Panciera,cd   Mark C. Reuter,c   Eric A. Stacha  and  Frances M. Ross*c  

* Corresponding authors

a Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA

b Department of Electrophysics, College of Science, National Chiao Tung University, Hsinchu, Taiwan
E-mail: ycchou@nctu.edu.tw

c IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
E-mail: fmross@us.ibm.com

d Engineering Department, University of Cambridge, Cambridge, UK

Abstract

We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.

Graphical abstract: Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

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Article information

DOI
https://doi.org/10.1039/C6CC00303F
Article type
Communication
Submitted
12 Jan 2016
Accepted
14 Mar 2016
First published
15 Mar 2016

Chem. Commun., 2016,52, 5686-5689

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Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Y. Chou, F. Panciera, M. C. Reuter, E. A. Stach and F. M. Ross, Chem. Commun., 2016, 52, 5686 DOI: 10.1039/C6CC00303F

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